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We study the THz wave generation by the time-domain spectroscopy method in the spiral antennas fabricated on the low-temperature grown InGaAs layers on GaAs substrates with crystallographic orientations (100) and (111) It was found that the THz wave generation is 3-4 times more effective in the case of (111)A GaAs substrates as compared to the (100) substrates. Power-voltage characteristic of the InGaAs antenna up to and beyond threshold breakdown voltage is reported.