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The device characteristics of thin films have a large dependence on the substrate material because heteroepitaxial film becomes dominated by extended defects arising, first of all, from the interfacial mismatch. Here, for this reason, some attempts were made to solve this problem. Structural data were analysed for database for inorganic oxide compounds which was up-to-dated using the data from scientific journals. The main attention was paid to candidates from the viewpoint of phase stability, easy of growth and their physico-chemical properties. The epitaxial relations were examined for some crystallographic orientations of the GaN epicrystal and substrates like Al2O3, MgO, ZnO ZrO2, LiAlO2, YAlO3, LaAlO3, LiGaO2, LaGaO3, NdGaO3, KTaO3, LaTa3O9, LaTa7O19, Ca2LaTaO6, SrTiO3, Si, SiC, perovskite-, spinel- and wurzite-type structures.