ИСТИНА

he application of precise Electron Beam Lithography for the charge-sensitive local probe, based on FET with nanowire channel is presented. A kinked-like silicon nanowire FET was fabricated from the non-uniformly doped SOI film extremely close (< 100 nm) to the sharp corner of a silicon chip. The Elthy-Quantum attachment for Carl Zeiss Supra-40 Field-Emission Scanning Electron Microscopy was used for e-beam lithography. By applying of java-scripting programming capabilities built in Raith software platform, the special algorithm was developed to perform the alignment of the pattern to the chip orthogonal corner. The straight edges of a silicon chip was used as a coordinate markers for the several successive patterning steps to define the fine structure of the nanowire and a rough contact pads picture in the same e-beam resist layer. Since the whole process of sample fabrication cycle has the ability to perform only one lithographic step (due to impracticability to spin-coat the sample with sharp edge by new uniform resit layer), the shadow-evaporation trick technique [1] was used for making of the separate masks for nanowire (Al) and outer electrodes (Cr+Al). At the final step the narrow nanowire channel was formed by anisotropic reactive-ion etching of the top silicon layer in fluorine plasma through this bimetallic mask. We suggest the application of our results for the development of local field/charge sensors for the study of mesoscopic objects. It can be also useful in other fields, like material science, biology applications, medicine, etc.