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Selective deposition of carbon nanowalls and investigation of their emission properties Carbon nanowalls on porous silicon and their emission propertiesдоклад на конференции
- Авторы: Пилевский А.А., Степанов А.Л., Суетин Н.В., Рахимов А.Т., Borisov V.V., Евлашин С.А.
- Международная Конференция : 24th International Vacuum Nanoelectronics Conference (IVNC)
- Даты проведения конференции: 2011
- Тип доклада: не указан
- Докладчик: Евлашин С.А.
- Место проведения: Wuppertal
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Аннотация доклада:
In this work we discuss emission characteristics of carbon nanowalls on porous silicon. The samples used were n-type Si 4, 5 Ω cm and p-type Si 3 Ω cm. Surface modifications were made using photoelectrochemical methods. After that, the carbon nanowalls were grown on the substrates using a PECVD method after which the emission characteristics were measured. The carbon nanostructures on porous silicon were grown without additional treatment. These samples show a low emission threshold and a good current density. Different etching regimes were studied. The maximum current density was more than 6 A/cm 2. -------------------------------------------------------------------------------- Reaxys Database Information |
- Добавил в систему: Рахимов Александр Турсунович