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Disorder distribution in Arrays of Vertically Aligned CNTs along the growth directionдоклад на конференции
- Авторы: Chechenin N.G., Makunin A.V., Bukunov K.A., Vorobyeva E.A.
- Международная Конференция : NANOSMAT 2016, 11th International Conference on Surfaces, Coatings and Nanostructured Materials
- Даты проведения конференции: 6-9 сентября 2016
- Дата доклада: 8 сентября 2016
- Тип доклада: Стендовый
- Докладчик: Chechenin N.G.
- Место проведения: Авейро, Portugal
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Аннотация доклада:
As a result of detailed study of MWCNTs Raman spectrum features, introduced phenomenological peaks are associated with defects. Amount of disorder tends to increase from substrate to the top of the VANTs arrays. Raman I(D)/I(G) ratio variation along the growth direction of the arrays is estimated as linearly increasing. Quantitative analysis of Raman ratios, that have relation to I(D′) revealed two distinct regions along the growth direction with different types of defects prevailing. Convenient multi-plot representation of several Raman peak parameter ratios is proposed.
- Добавил в систему: Чеченин Николай Гаврилович