ИСТИНА

GST255 based devices attract the attention of researchers due to wide opportunities in designing phase change memory. Herein, we studied a possibility to fabricate periodic micro- and nanorelief at surfaces of GST255 thin films on silicon/silicon oxide substrates under multi-pulse femtosecond laser irradiation with the wavelength of 1250 nm. One-dimensional lattices with periods of about 1250 and 130 nm were obtained depending on the number of acted laser pulses. Emergence of these structures can be explained by plasmon-polariton generation and laser-induced hydrodynamic instabilities, respectively. Additionally, formation of the lattices whose spatial period is close to the impacted laser wavelength can be modelled by considering the free carrier contribution under intensive photoexcitation. The obtained structures demonstrate strong artificial anisotropy of conductivity. Raman spectroscopy revealed both crystallization and re-amorphization of the irradiated films. The obtained results show a possibility to fabricate rewritable all-dielectric data-storage devices based on GST255 with periodic relief.