ИСТИНА

The paper presents a study of gallium-doped zinc oxide (GZO) films ~225 and ~370 nm thick for crystalline silicon solar cell applications. The films were grown by ultrasonic spray pyrolysis at 400 °C in argon on (nn+)Si, (pp+)Si, and (p+nn+)Si structures and microscope slides. The Ga/Zn ratio in the film-forming solution was varied in the range of 0–15 at.%. The films were annealed for 10 min at 400 °C in an argon + methanol vapor mixture. We report the morphology of the films, absorption spectra, and resistivity, the time variation of their resistivity, and the photovoltage of GZO/(nn+)Si, GZO/(pp+)Si, and GZO/(p+nn+)Si structures.