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The influence of boron (pp) Back Surface Field (BSF) on front and rear conversion parameters of bifacial Laminated Grid Solar Cells (LGCell) +having IFO/(n+pp+)Cz-Si/ITO structure has been investigated. LGCells with sheet resis-tance of (p+)Si layer in the range 17÷240 Ω/sq were fabricated by using etch back procedure. Besides, TCO deposition condi-tions were optimised taking into account consecutive deposition of IFO (Indium Fluorine Oxide) and ITO (Indium Tin Ox-ide) films to avoid the degradation of the film, deposited first. Therefore, IFO film was deposited first at optimal condition (high temperature, Ar media), while ITO film was deposited second at compromise condition (lowered oxygen content com-pared to the optimal value). Measured for front and rear illumination external spectral response and light current-voltage curves showed that BSF layer etching had considerable impact on the rear efficiency whereas the changes of front efficiency were much lower. At optimal conditions, LGCell demonstrated 18.5% front and 14.3% rear efficiencies, where the front effi-ciency is more than 1% higher compared to the previous result.