![]() |
ИСТИНА |
Войти в систему Регистрация |
ФНКЦ РР |
||
The contact resistance of ITO/(n+)Si interface in ITO/(n+-p)Si solar cells has been investigated and linked to the parameters of n+-layer forming technology, namely, the diffusion temperature, diffusion time, phosphorus content in the Phosphorus Containing Glass, and also on the time of heat treatment of deposited ITO films