ИСТИНА

Metal-oxide-semiconductors (MOS) are being actively studied as the candidates for the development of novel semiconductor devices. β-Ga 2 O 3 is one of the most promising materials of this class, has ultra-wide-band-gap (E g =4.8eV), high breakdown field, high dielectric constant, high carrier mobility and as a result, a high Baliga figure of merit (BFOM) exceeding that of Si, SiC, GaN. Nowadays we see activity in research and development of bulk gallium oxide-based devices: metal-oxide-semiconductors field-effect transistors (MOSFETs), modulation-doped field-effect transistors (MODFETs), fin-array field-effect transistors (finFETs) and Schottky barrier diodes (SBD). In all of them, Ga 2 O 3 acts as a substrate. However, the high density of structural defects and the limited crystal perfection of β-Ga 2 O 3 crystals restrain the development of gallium oxide electronics.