ИСТИНА

Electrolyte-gated organic field-effect transistors (EGOFET) have proved to be a convenient sensor architecture for detecting various analytes in solutions. This technology can be produced by printing methods, cheap and easily scalable. Combination of semiconductor properties of the conjugated molecule and high binding constants of crown ethers leads to a new field of application of the crown-ether molecules class I as the basis for EGOFET-based metal ions sensors. The proposed approach to obtaining a receptor layer makes it possible to create a universal platform for further ion recognition through the use of crown-ether structures that can bind to the supporting layer without significantly impairing the electrical properties of EGOFET devices. The resulting sensor can be used as part of a multi-sensor device capable of detecting metal ions. The structure of the new semiconductor material is designed to integrate the molecules of the supporting layer (Langmuir layers) and increase the mobility of charge carriers on the surface of the layer, as well as to orient the recognizing part of the molecule (crown ether) towards the analyte , excluding steric factors, preventing the capture of ions from the solution. This work is aimed at creating a new EGOFET sensor capable of selectively detecting K+ or Ag+ ions in an aqueous solution. It is assumed that the application of a new material on the surface of the EGOFET semiconductor monolayer will lead to self-organization of this layer, which will lead to an increase in the selective response to metal ions. In the process of this work, the synthesis of a new semiconductor material based on crown-ether compounds is assumed, as well as the development and characterization of an EGOFET sensor using the resulting semiconductor material.