ИСТИНА

Two-dimensional transition metal dichalcogenides (TMD) attract attention, in particular, due to their properties prospective for numerous applications. A chemical vapor deposition (CVD) is used in this work for production of coatings consisting of tiny flake-like crystallites oriented perpendicular to substrate surface and forming mesoporous layer. The gaseous H2S and metal (Mo and W) vapor are used as precursors for the CVD synthesis on substrates of different types, including Si and SiO2/Si, quartz, mica, Al2O3 ceramic and other. Atomic structure and morphology of the layers are investigated with scanning and transmission electron microscopy. The samples of the CVD grown layers are characterized with Raman, optical absorption and photoluminescent spectroscopy. Electrical resistivity of the film materials is measured during deposition process. Material formation mechanism is proposed on basis of obtained results analysis.