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The developed techniques of lithography and electromigration allow us to create a complete integrated system of the transistor electrodes. The techniques of deposition of quantum dot between the electrodes (gold nanoparticles with a diameter of 3 nm) was carried out and the characteristics of the electron transport of the system were measured. It has shown a single-electron character of the conductivity at room temperature. This demonstrates the perspective of the proposed methods for the experimental study of single-electron transistors.