ИСТИНА

Electrodes for molecular transistor with the gaps between them within 5 nm width’s range were created. On the first step suspended electrodes-blanks with 30 nm gaps was fabricated with a standard bilayer technology with electron beam lithography. Then wet etching in a 6% solution of hydrofluoric acid buffered with hydrofluoride of ammonium makes possible to suspend these electrodes-blanks gaps to prevent them from short-circuit at the step of additional evaporation of metal film. The efficiency of narrowing of the gap between source and drain electrodes (as a result of additional deposition of metal film on the preformed gap) was 50-70% of the deposited film thickness.