ИСТИНА

Zinc oxide is a promising functional wide-gap semiconductor. ZnO-based materials belong to the group of transparent conducting oxides (TCO). Doping of ZnO provides an opportunity to regulate electrical and optical properties over a wide range. ZnO, ZnO(Ga), ZnO(In) and ZnO(Ga,In) thin films were synthesized by spin-coating technique with further annealing at 723 K. The effect of cation composition on structural, morphological, optical and electrical properties of films was studied. Only polycrystalline ZnO (wurtzite) phase was observed for all films. Increase of impurity content leads to the decrease of grain sizes. The dependence of resistivity of ZnO(Ga) films on Ga content has minimum at 1.0 at.% Ga. The resistivity of ZnO(In) films decreases with In content. The lowest values of resistivity were obtained for ZnO(Ga,In) thin films. All films are transparent in the visible region. The average transmittance of ZnO film is 89% (at 400-800 nm). Introduction of small Ga amount leads to the increase of this value up to 95%, then it decreases with Ga content. The same tendency is observed for ZnO(In) films. The maximum transmittance was achieved in ZnO(Ga,In) film and was 97%. The best electrical and optical properties were found for ZnO film containing 1 at.% Ga and 0.7 at.% In.