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Дата последнего поиска статьи во внешних источниках: 22 ноября 2015 г.
Аннотация:Transport and magnetic properties of δ-Mn doped GaAs/InGaAs/GaAs quantum wells (QW) with various In content were studied at temperatures 4.2K≤T≤300K. Fluctuation potential (FP) appeared to be crucial for transport characteristics of structures under investigation. The
magnetic percolation transition was observed at temperature Tp in the range 20 - 40K. The change of the anomalous Hall effect (AHE) sign with decreasing temperature was detected at temperatures close to the Tp. The main reason of the AHE sign change is the variation of contributions of different AHE mechanisms (intrinsic and side-jump) caused by the reduction of scattering intensity with temperature decrease. We believe that our results are the experimental observation of the AHE intrinsic mechanism in 2D.