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Vacuum ultra-violet emission of CF4 and CF3I containing plasmas and Their effect on low-k materialsстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 22 ноября 2015 г.
- Авторы: el Otell Z., Šamara V., Zotovich A., Hansen T., de Marneffe J.F., Baklanov M.R.
- Журнал: Journal of Physics D - Applied Physics
- Том: 48
- Номер: 39
- Год издания: 2015
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 395202
- DOI: 10.1088/0022-3727/48/39/395202
- Аннотация: CF 3 I was suggested as a replacement of CF 4 gas to decrease the plasma-induced damage (PID) on low-k dielectrics during etching. This proposal is investigated by means of plasma emission measurements and material characterisation. The experiments were conducted in a 300 mm capacitively coupled plasma source. The vacuum ultraviolet (VUV, IMG [http://ej.iop.org/images/0022-3727/48/39/395202/daa01f5ieqn001.gif] $30\leqslant λ \leqslant 220 $ nm) plasma emission was measured for discharges generated in a pure or a mixture of argon, CF 4 and/or CF 3 I, since VUV plays a major role in PID. However, CF 3 I containing discharges were found to have a stronger emission than CF 4 in the VUV range. Nevertheless, Fourier transform infra-red spectroscopy and κ -value measurements showed that there is almost no difference between the damage caused by CF 3 I or CF 4 containing plasmas, while etching in a capacitively coupled plasma source. It is proposed that the damage caused by CF 3 I with lower F * -density but higher VUV-photon flux is similar to the damage caused by CF 4 , with higher F * -density but lower VUV-photon flux.
- Добавил в систему: Зотович Алексей Иванович