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Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiationстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Fedorov G., Kardakova A., Gayduchenko I., Charayev I., Voronov B.M., Finkel M., Klapwijk T.M., Morozov S., Presniakov M., Bobrinetskiy I., Ibragimov R., Goltsman G.
- Журнал: Applied Physics Letters
- Том: 103
- Номер: 181121
- Год издания: 2013
- Издательство: AIP Publishing
- Местоположение издательства: United States
- DOI: 10.1063/1.4828555
- Аннотация: We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before.
- Добавил в систему: Гольцман Григорий Наумович