THERMAL OXIDATION OF CuInSe2: EXPERIMENT AND PHYSICO-CHEMICAL MODELстатья
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Дата последнего поиска статьи во внешних источниках: 22 февраля 2016 г.
Аннотация:The thermal oxidation of CuInSe2 single crystals and bulk polycrystalline plates of n- and p-type conductivity with polished facets have been carried out at elevated temperatures 400 to 61O°C in dry oxygen/air atmosphere. All the crystals demonstrated an enhancement in hole conductivity near the surface. Additionally, transparent layers of In203 chemical composition have been grown on the surface.
Electron-probe analysis, Rutherford backscattering, x-ray diffraction, optical and photoelectric experimental data have provided a basis to develop a physico-chemical model thermal oxidation of CuInSe2 crystals. The model includes the In2O3 compound appearance, VSe, VCu vacancy absorption, Sei? Cui extra atom and Cu^Se generation. The chemical reactions are accompanied by arising dislocations and mechanical stresses at the In2O3/CuInSe2 interface.