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Atomic layer deposition of TiO2 and Al2O3 on nanographite films: structure and field emission propertiesстатья
Информация о цитировании статьи получена из
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 3 сентября 2018 г.
- Авторы: Kleshch Victor I., Ismagilov Rinat R., Smolnikova Elena A., Obraztsova Ekaterina A., Tuyakova Feruza, Obraztsov Alexander N.
- Журнал: Journal of Nanophotonics
- Том: 10
- Номер: 1
- Год издания: 2016
- Издательство: Society of Photo-Optical Instrumentation Engineers
- Местоположение издательства: United States
- Первая страница: 012509
- DOI: 10.1117/1.JNP.10.012509
- Аннотация: Atomic layer deposition (ALD) of metal oxides (MO) was used to modify the properties of nanographite (NG) films produced by direct current plasma–enhanced chemical vapor deposition technique. NG films consist of a few layers of graphene flakes (nanowalls) and nanoscrolls homogeneously distributed over a silicon substrate with a predominantly vertical orientation of graphene sheets to the substrate surface. TiO2 and Al2O3 layers, with thicknesses in the range of 50 to 250В nm, were deposited on NG films by ALD. The obtained NG-MO composite materials were characterized by scanning electron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. It was found that ALD forms a uniform coating on graphene flakes, while on the surface of needle-like nanoscrolls it forms spherical nanoparticles. Field emission properties of the films were measured in a flat vacuum diode configuration. Analysis based on obtained current–voltage characteristics and electrostatic calculations show that emission from NG-TiO2 films is determined by the nanoscrolls protruding from the TiO2 coverage. The TiO2 layers with thicknesses of <200  nm almost do not affect the overall field emission characteristics of the films. At the same time, these layers are able to stabilize the NG films’ surface and can lead to an improvement of the NG cold cathode performance in vacuum electronics.
- Добавил в систему: Исмагилов Ринат Рамилович