Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0)A substrates with a metamorphic bufferстатья
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Дата последнего поиска статьи во внешних источниках: 6 сентября 2018 г.
Аннотация:The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated
on the low-temperature and high-temperature grown undoped and Si-doped In0.5Ga0.5As
films is studied by the terahertz time-domain spectroscopy method. The In0.5Ga0.5As
layers were grown by molecular beam epitaxy on GaAs substrates with (1 0 0) and (1 1 1)
A crystallographic orientations utilizing step-graded InxGa1−xAs metamorphic buffer. The
antennas are excited by radiation of Er3+-fiber laser at 1.56 μm wavelength in two regimes:
with pulse durations of 2.5 ps or 100 fs. It is found that the THz wave generation is 3–4 times
more effective in the case of InGaAs-based antennas on (1 1 1)A GaAs substrates as compared
to the (1 0 0) substrates. Power-voltage characteristic of the LT-InGaAs antenna up to and
beyond threshold breakdown voltage are reported.