High performance atomistic simulation of thin films porosity and surface structure

Авторы: Grigoriev F.V., Sulimov V.B., Tikhonravov A.V.
Сборник: Proceedings Volume 10691, Advances in Optical Thin Films VI
Год издания: 2018
Первая страница: 1069109-1
Последняя страница: 1069109-7
DOI: 10.1117/12.2312707
Аннотация: The earlier developed molecular dynamics approach is applied to the investigation of porosity and surface structure of thin films obtained under different deposition conditions. The empirical Monte-Carlo simulation procedure is developed and applied for the search of pores in silicon dioxide thin films. The pores distribution depending on the thickness of growing films and porosity dependence on substrate temperature and deposition energy are studied. It is revealed that the dimensions of pores increase with the decrease of deposition energy. The growth of substrate temperature from 300 K to 500 K results in the increase of porosity in the case of high-energy deposition and in the decrease of porosity in the case of low-energy deposition. It is found that in the case of high-energy deposition film structural properties vary insignificantly with the variation of energy distribution of deposited atoms providing that the average energy of deposited atoms is constant.
Добавил в систему: Тихонравов Александр Владимирович

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