Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Polyakov, A.Y.; Smirnov, N.B.; Shchemerov, I.V.; Yakimov, E.B.; Pearton, S.J.; Fares, C.; Yang, J.; Ren, F.; Kim, J.; Lagov, P.B.; Stolbunov, V.S.; Kochkova, A.

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 2 октября 2018 г.

Авторы: Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Yakimov E.B., Pearton S.J., Fares C., Yang J., Ren F., Kim J., Lagov P.B., Stolbunov V.S., Kochkova A.
Журнал: Applied Physics Letters
Том: 113
Номер: 092102
Год издания: 2018
Издательство: AIP Publishing
Местоположение издательства: United States
Первая страница: 092102-1
Последняя страница: 092102-5
DOI: 10.1063/1.5049130
Аннотация: Carrier removal rates and electron and hole trap densities in b-Ga2O3 films grown by hydride vapor phase epitaxy (HVPE) and irradiated with 18MeV a-particles and 20MeV protons were measured and compared to the results of modeling. The electron removal rates for proton and a-radiation were found to be close to the theoretical production rates of vacancies, whereas the concentrations of major electron and hole traps were much lower, suggesting that the main process responsible for carrier removal is the formation of neutral complexes between vacancies and shallow donors. There is a concurrent decrease in the diffusion length of nonequilibrium charge carriers after irradiation, which correlates with the increase in density of the main electron traps E2* at Ec-(0.75–0.78) eV, E3 at Ec-(0.95–1.05) eV, and E4 at Ec-1.2 eV. The introduction rates of these traps are similar for the 18MeV a-particles and 20MeV protons and are much lower than the carrier removal rates.
Добавил в систему: Лагов Петр Борисович

	ИСТИНА	Войти в систему Регистрация
	ФНКЦ РР
	Главная Поиск Статистика О проекте Помощь

ИСТИНА

ФНКЦ РР

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3статья Исследовательская статья

Прикрепленные файлы