Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfaces

Muzychenko, D.A.; Schouteden, K.; Panov, V.I.; Van Haesendonck, C.

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.

Авторы: Muzychenko D.A., Schouteden K., Panov V.I., Van Haesendonck C.
Журнал: Nanotechnology
Том: 23
Номер: 43
Год издания: 2012
Издательство: IOP Publishing
Местоположение издательства: [Bristol, UK], England
Первая страница: 435605-(1)
Последняя страница: 435605-(12)
DOI: 10.1088/0957-4484/23/43/435605
Аннотация: The formation of a novel surface reconstruction upon Co deposition on freshly cleaved Ge(111)2x1 surfaces is studied by means of scanning tunneling microscopy (STM) at 4.5K. Previously we demonstrated that at this low substrate temperature the deposited Co atoms remain immobile after they become embedded underneath the Ge(111)2x1 surface. We now demonstrate that at higher substrate temperatures the embedded Co atoms are able to diffuse below the surface in a direction parallel to the upper pi-bonded chain rows. This one-dimensional temperature-induced mobility results in subsurface accumulation of Co atoms at atomic steps, at domain boundaries and on atomically flat Ge terraces at, e.g., vacancies or adatoms, where reconstructed Co/Ge intermixing layers are formed. Voltage dependent STM images reveal that the Co related surface reconstruction locally exhibits an ordered atomic structure with the same inter-atomic distance as that of the initial 2x1 reconstructed pure Ge(111) surface. On the other hand, the presence of the Co results in a doubling of the periodicity along the [2-1-1] direction in the STM images, which can be related to the modified electronic properties of the pi-bonded chains. © 2012 IOP Publishing Ltd.
Добавил в систему: Музыченко Дмитрий Анатольевич

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Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfacesстатья

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