Enhanced Raman scattering in grooved silicon matrixстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Multiple enchancement of the Stokes Raman scattering in grooved silicon structures, which consist of sequences of voids (grooves) and crystalline Si walls, was observed under excitation with wavelength close to the Si wall width of similar to 1 mu m. The results obtained are interpreted as a manifestation of the partial light localization within the grooved structures, which increases the effective volume of the medium interacting with excitation light. Based on this effect we conclude that grooved silicon structures can act as a matrix for increasing the Raman scattering efficiency to different substances embedded into the grooves. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim