Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boronстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25-45 m Omega cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented alone, the [1 (1) over bar0 ] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated.