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The role of boron impurity in the activation of free charge carriers in layers of porous silicon during the adsorption of acceptor moleculesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Osminkina L.A., Konstantinova E.A., Sharov K.S., Kashkarov P.K., Timoshenko V.Y.
- Журнал: Semiconductors
- Том: 39
- Номер: 3
- Год издания: 2005
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 347
- Последняя страница: 350
- DOI: 10.1134/1.1882799
- Аннотация: Infrared-absorption spectroscopy and electron spin resonance are used to study the role of boron impurity in the activation of free charge carriers in layers of porous silicon that have been exposed to nitrogen dioxide acceptor molecules. It is found that the higher the level of doping is for the substrates used in the production of porous silicon, the higher the concentration of free holes that appear as a result of the adsorption of nitrogen dioxide. The experimental results are accounted for by the appearance of donor-acceptor pairs formed by anionic radicals (NO2)(-) and positively charged defects (dangling silicon bonds) at the surface of the silicon nanocrystals that comprise porous silicon. (c) 2005 Pleiades Publishing, Inc.
- Добавил в систему: Тимошенко Виктор Юрьевич