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Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescenceстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 ноября 2017 г.
- Авторы: Teterukov S.A., Lisachenko M.G., Shalygina O.A., Zhigunov D.M., Timoshenko V.Y., Kashkarov P.K.
- Журнал: Physics of the Solid State
- Том: 47
- Номер: 1
- Год издания: 2005
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 106
- Последняя страница: 109
- DOI: 10.1134/1.1853456
- Аннотация: The Stark splitting of the energy levels of Er3+ ions implanted in a structure made up of alternating layers of silicon dioxide and quasi-ordered silicon nanocrystals is calculated. The level splitting is caused by the electric field of the image charges induced at the interfaces between layers with different permittivities. The splitting was established to increase as the contrast in permittivity between the silicon dioxide and silicon nanocrystal layers increases, as well as when the erbium ions approach the layer interface. The results obtained offer an adequate explanation of the experimentally observed additional broadening of the erbium photoluminescence band (0.8 eV) with increasing characteristic size of the silicon nanocrystals. (C) 2005 Pleiades Publishing, Inc.
- Добавил в систему: Тимошенко Виктор Юрьевич