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Effect of the initial doping level on changes in the free-carrier concentration in porous silicon during ammonia adsorptionстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Pavlikov A.V., Osminkina L.A., Belogorokhov I.A., Konstantinova E.A., Efimova A.I., Timoshenko V.Y., Kashkarov P.K.
- Журнал: Semiconductors
- Том: 39
- Номер: 11
- Год издания: 2005
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 1338
- Последняя страница: 1341
- DOI: 10.1134/1.2128462
- Аннотация: Infrared spectroscopy is used to investigate the effect of ammonia adsorption on the concentration of equilibrium charge carriers in porous-silicon layers with various initial types of dopants at different concentrations. It is found that ammonia adsorption results in an increase in the number of free electrons in n-type samples up to a level exceeding 10(18) cm(-3). In p-type samples, a nonmonotonic dependence of the charge-carrier concentration on ammonia pressure is observed. The obtained results are accounted for by the appearance of adsorption-induced shallow donor states that, along with the initial-dopant and surface-defect states, specify the charge-carrier type and concentration in the silicon nanocrystals of the porous layer after ammonia adsorption. (c) 2005 Pleiades Publishing, Inc.
- Добавил в систему: Тимошенко Виктор Юрьевич