Effect of annealing on the real structure of doped PbTe crystalsстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The effect of isothermal annealing on the microstructure of PbTe crystals doped with Cr, Co, Ni, Ga, and In was studied. The materials studied differed in dopant content and real structure (density of dislocations, inclusions, and precipitates). Annealing was found to promote dopant outdiffusion and the growth of microprecipitates, reducing the concentration of electrically active, donor impurities. The effect of annealing depends on the nature and concentration of the dopant.