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Planar Hall effect and anisotropic magnetoresistance in layered structures Co0.45Fe0.45Zr0.1/a-Si with percolation conductionстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Aronzon B.A., Granovskii A.B., Davydov A.B., Dokukin M.E., Kalinin Yu E., Nikolaev S.N., Rylkov V.V., Sitnikov A.V., Tugushev V.V.
- Журнал: Journal of Experimental and Theoretical Physics
- Том: 103
- Номер: 1
- Год издания: 2006
- Издательство: Maik Nauka/Interperiodica Publishing
- Местоположение издательства: Russian Federation
- Первая страница: 110
- Последняя страница: 118
- DOI: 10.1134/S1063776106070120
- Аннотация: Magnetic and magnetotransport properties of multilayered nanostructures Co0.45Fe0.45Zr0.1/a-Si obtained by ion-beam sputtering are investigated. The temperature dependence of the resistance obeys a law of the form R (xx) proportional to-logT, which is typical of metal-insulator nanocomposites on the metal side of the percolation transition. The magnetoresistance anisotropy effect, as well as the planar Hall effect, is observed for the first time for this type of nanocomposites in the vicinity of the percolation transition. The correlation of these two effects with the transverse (between Hall probes) magnetoresistive effect, which may reach 6-9%, is revealed. A weak negative magnetoresistance of the order of 0.15%, which is observed for subnanometer amorphous silicon layer thicknesses, is attributed to spin-dependent electron transitions between adjacent ferromagnetic layers in the case when the exchange interaction between these layers is of the antiferromagnetic type.
- Добавил в систему: Грановский Александр Борисович