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Probing the plasma chemistry in a microwave reactor used for diamond chemical vapor deposition by cavity ring down spectroscopyстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Jie Ma, Richley James C., Ashfold Michael N.R., Mankelevich Yuri A.
- Журнал: Journal of Applied Physics
- Том: 104
- Номер: 10
- Год издания: 2008
- Издательство: AIP Publishing
- Местоположение издательства: United States
- Первая страница: 103305
- DOI: 10.1063/1.3021095
- Аннотация: Absolute column densities of C(2)(a) and CH radicals and H(n=2) atoms have been measured in a diamond growing microwave reactor operating with hydrocarbon/Ar/H(2) gas mixtures as functions of height (z) above the substrate surface and process conditions. The monitored species are each localized in the hot plasma region, where T(gas)similar to 3000 K, and their respective column densities are each reproduced, quantitatively, by two-dimensional (r,z) modeling of the plasma chemistry. The H(n=2) distribution is seen to peak nearer the substrate, reflecting its sensitivity both to thermal chemistry (which drives the formation of ground state H atoms) and the distributions of electron density (n(e)) and temperature (T(e)). All three column densities are found to be sensitively dependent on the C/H ratio in the process gas mixture but insensitive to the particular choice of hydrocarbon (CH(4) and C(2)H(2)). The excellent agreement between measured and predicted column densities for all three probed species, under all process conditions investigated, encourages confidence in the predicted number densities of other of the more abundant radical species adjacent to the growing diamond surface which, in turn, reinforces the view that CH(3) radicals are the dominant growth species in microwave activated hydrocarbon/Ar/H(2) gas mixtures used in the chemical vapor deposition of microcrystalline and single crystal diamond samples.
- Добавил в систему: Манкелевич Юрий Александрович