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Luminescent properties of semiconductor composite systems composed of erbium triphthalocyanine molecules and a silicon slot structure in the near-infrared regionстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Belogorokhov I.A., Mamichev D.A., Pushkarev V.E., Tomilova L.G., Khokhlov D.P.
- Журнал: JETP Letters
- Том: 92
- Номер: 10
- Год издания: 2010
- Издательство: Maik Nauka/Interperiodica Publishing
- Местоположение издательства: Russian Federation
- Первая страница: 676
- Последняя страница: 680
- DOI: 10.1134/S002136401022008X
- Аннотация: Photoluminescence spectra of organic semiconductors based on mono-, bis-, and triphthalocyanine containing erbium as a complexing agent have been obtained in the range of 1-1.8 mu m. Comparison of the spectral characteristics has shown that erbium triphthalocyanine has the highest photoluminescence quantum yield at a wavelength of 1.5 mu m. To enhance this effect, composite materials based on erbium triphthalocyanine and a silicon slot structure have been synthesized, in which an additional increase in the photoluminescence signal near 1.14 mu m has been observed. At the same time, no photoluminescence signal has been observed near the wavelength of 1.5 mu m. This can be explained by taking into account the interaction of the erbium triphthalocyanine molecules with the adsorption centers of the silicon matrix.
- Добавил в систему: Хохлов Дмитрий Ремович