Dielectric properties of triglycine sulfate crystals with defects at low and infralow frequenciesстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Dielectric responses of several crystals in ultraweak measuring fields at low and infralow frequencies are compared, namely, of nominally pure, Cr- and Lalpha-alanine-doped triglycine sulfate (TGS) crystals and TGS + Cr3+ crystals irradiated with X-rays. It is shown that dopant-induced bias fields give rise to crystal unipolarity, suppress the domain contribution to their dielectric response, and diffuse the phase transition. It is established that X-ray irradiation of the crystals results in "radiation annealing" of TGS + Cr3+ crystals, which increases their permittivity and diminishes diffusion of the phase transition. (C) 2004 MAIK "Nauka/Interperiodica".