ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF PBTE(GA) BOMBARDED BY ELECTRONSстатья
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Аннотация:The effect of intensive bombardment by electrons (temperature T congruent-to 300 K, electron energy E - 6 MeV, electron flux PHI<3 X 10(17) cm-2) on the electrical and photoelectric properties of n- and p-type PbTe single crystals doped with gallium in the amount C(Ga) = 0.1-0.4 at.% has been studied experimentally. A decrease in the hole density, a p-n inversion, and a transition to the insulating state as a result of electron bombardment has been observed in p-type PbTe(Ga) samples. The PbTe(Ga) samples in the insulating state were found to have an enhanced radiation stability of the electrical and photoelectric properties, regardless of whether this state was reached as a result of doping (samples with n-type conductivity) or as a result of bombardment by electrons (samples with p-type conductivity). (C) 1994 American Institute of Physics.