Аннотация:The electrical resistivity and the Hall coefficient PbTe:Ga were measured in the temperature range 4.2-300 K using samples in which the N(Ga) concentration was within the range 0.1-1 at.%. The measurements were carried out both in darkness and in the presence of controlled infrared background radiation. Considerable differences were observed in the nature of the galvanomagnetic properties and in the reaction to infrared background radiation between p-type samples with N(Ga) < 0.4 at.% and n -type samples with N(Ga) less-than-or-equal-to 0.4 at.%. The results obtained were interpreted using a model allowing for an inhomogeneous distribution of the dopant in the bulk of a crystal and for the stabilization of the Fermi level in a certain range of N(Ga).