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Rearrangement of electronic structure of Pb 1-x-ySn xV yTe under pressureстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Skipetrov E.P., Golovanov A.N., Kovalev B.B., Mousalitin A.M., Slyn’ko E.I., Slyn’ko V.E.
- Журнал: Journal of Physics: Conference Series
- Том: 377
- Номер: 1
- Год издания: 2012
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 012021
- DOI: 10.1088/1742-6596/377/1/012021
- Аннотация: The galvanomagnetic properties in weak magnetic fields (4.2≤T≤300 K, B≤0.07 T) and the Shubnikov-de Haas effect (T=4.2 K, B≤7 T) in the single crystal Pb 1-x-ySn xV yTe (x=0.05-0.20, y≤0.01) alloys at atmospheric pressure and under hydrostatic compression up to 15 kbar have been investigated. We found that the increase of the vanadium impurity content leads to the p-n-conversion, transition to the insulating phase and to the pinning of Fermi level by the deep impurity level, lying under the bottom of the conduction band. Under pressure a decrease of the activation energy of the vanadium level, the n-p-inversion of the conductivity type at low temperatures and an insulator-metal transition occur. The pressure and the temperature coefficients of vanadium deep level energy are determined and the diagram of the electronic structure rearrangement for Pb 1-x-ySn xV yTe under pressure is proposed.
- Добавил в систему: Скипетров Евгений Павлович