|
ИСТИНА |
Войти в систему Регистрация |
ФНКЦ РР |
||
Interband breakdown in a Kane semiconductor with a degenerate hole distributionстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Evlyukhin A.B., Dmitriev A.V., Artamkin A.
- Журнал: AIP Conference Proceedings
- Том: 893
- Год издания: 2007
- Первая страница: 141
- Последняя страница: 142
- DOI: 10.1063/1.2729809
- Аннотация: This work is devoted to the theoretical study and computational modeling of hot electron transport and interband breakdown in a semiconductor with the Kane band dispersion law and highly degenerate hole distribution. The majority carriers in this material are holes, but as a high electric field is applied to it, the temperature of electrons and their contribution into the current increase greatly because of small electron effective mass and their high mobility. As a result, an average electron energy can considerably exceed that of holes and even approach the ionization threshold value. Therefore in this p-type material the interband breakdown can be caused by electron impact ionization. This is an unusual system where the ionization threshold is electric field dependent because the ionization in it takes place from the hole Fermi level which itself changes during the breakdown process. We found that a specific mechanism of S-type NDC formation may take place in this material under breakdown conditions. The current instability is connected with the entirely Coulomb electron scattering by heavy holes. © 2007 American Institute of Physics.
- Добавил в систему: Дмитриев Алексей Владимирович