Galvanomagnetic and photoelectric properties of electron-irradiated PbTe(Ga)

Авторы: Skipetrov E.P., Nekrasova A.N., Skipetrova L.A., Ryabova L.I.
Сборник: Proceedings of SPIE
Том: 3182
Год издания: 1997
Первая страница: 228
Последняя страница: 231
DOI: 10.1117/12.280432
Аннотация: The effect of deep electron irradiation on the galvanomagnetic and photoelectric properties of p- and n-type PbTe single crystals doped with gallium have been investigated. It has been found that electron irradiation of p-type samples results in the decrease of the holes concentration, the p-n-conversion and the transition of irradiated crystals to a dielectric state. In all investigated samples long-term relaxation processes and effect of persistent photoconductivity at low temperatures (T<70 K) have been revealed. Under the electron irradiation the photoresponse in the p-type samples with low gallium concentration monotonously increases up to the point of transition to the dielectric state. In the dielectric state galvanomagnetic and photoelectric parameters of the samples do not depend on the irradiation fluence whether it has been achieved by means of sufficient doping (n-PbTe(Ga)) or slight initial doping (p-PbTe(Ga)) followed by the electron irradiation and PbTe doped with gallium possesses high radiation hardness of galvanomagnetic and photoelectric parameters.
Добавил в систему: Скипетров Евгений Павлович

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