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Design of Compatible Metal‐Organic Precursors for Chemical Deposition of Complex Oxide Thin Filmsтезисы доклада
- Авторы: Tsymbarenko D., Martynova I., Kendin M., Gashigullin R., Zakirov A., Ismagilov K., Sharovarov D., Nygaard R.
- Сборник: Сборник тезисов всероссийского кластера конференций по неорганической химии "InorgChem2018"
- Тезисы
- Год издания: 2018
- Место издания: издательство АГТУ Астрахань
- Первая страница: 277
- Последняя страница: 278
- Аннотация: Application of many kinds of functional materials (e.g. superconductors, insulators, high-K materials, MIT layers, multiferroics, optical materials, etc.) in a form of thin films is of high interest. The development of simple, cost effective, easy scalable and universal technique of thin films production remains an important task for material sciences. Nowadays the chemical methods of deposition from either vapor phase or solution of metal-organic precursors, MOCVD and MOCSD respectively, seems to be most perspective, scalable and flexible for fabrication of functional material thin films. However for deposition of complex oxide thin films which simultaneously contain alkaline earth/rare earth and transition metals with drastic differce of chemical properties requires special design of compatible metal-organic precursors for both MOCVD and MOCSD. Here, we proposed alkaline earth (AEE, Ca, Sr, Ba), rare earth element (REE, La-Lu) and transition metal (Cu, Ni, Fe, Co, Mn) carboxylates (actetates, propionates and lactates) as well as beta-diketonates (acetylacetonates, dipivaloylmethanates) and their mixed-ligand complexes with ancillary neutral donor ligands (polyglymes and polyamines) as metal-organic precursors for MOCSD and MOCVD. The aforementioned homo- and mixed-ligand complexes were synthesized via ligand exchange reactions in either aqua or anhydrous conditions with the high yield and characterized by IR, NMR, elemental analysis, powder and single crystal XRD. Thermal behavior was studied by TG-DTA.
- Добавил в систему: Кендин Михаил Павлович