Charge density wave sliding driven by an interplay of conventional and Hall voltages in NbSe3 microbridgesстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 29 июля 2020 г.
Аннотация:Collective charge-density wave (CDW) transport was measured under a high magnetic field in NbSe3microbridges which have been cut transversely and at an angle to the chains’ direction. We give evidence thatthe CDW sliding is driven by the Hall voltage generated by the interchain current of normal carriers. We havediscovered a reentrance effect of the Hall-driven sliding above a crossover temperature at which the Hall constanthas been known to change signs. For the narrow channel, cut at 45◦ relative to the chain axis, we observed anevolution from the Hall-driven sliding at low temperatures, to the conventional sliding at higher temperatures,which corroborates with falling of the Hall constant. In this course, the nonlinear contribution to the conductivitycoming from the collective sliding changes signs. The quantization of Shapiro steps, generated presumably by acoherent sequence of phase slips, indicates that their governing changes from the applied voltage to the current.