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Study of polycrystalline silicon obtained by aluminum-induced crystallization depending on process conditionsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 13 февраля 2017 г.
- Авторы: Pereyaslavtsev Alexander, Sokolov Igor, Sinev Leonid
- Журнал: Materials Research Express
- Том: 3
- Номер: 11
- Год издания: 2016
- Первая страница: 116404
- DOI: 10.1088/2053-1591/3/11/116404
- Аннотация: In this paper, we have decided to consider an alternative method of producing polycrystalline silicon and study change of its electrophysical characteristics depending on process parameters. As an alternative low-pressure chemical vapor deposition method appears aluminum-induced crystallization (AIC), which allows to obtain a polycrystalline silicon film is significantly larger grain size, thereby reducing contribution of grain boundaries. A comprehensive study of polycrystalline silicon was carried out using a variety of microscopic (OM, SEM) and spectroscopic (RAMAN, XPS) and diffraction (EBSD, XRD) analytic methods. We also considered possibility of self-doping in AIC, result of which was obtained polycrystalline silicon with different resistance. Additionally considered changes in temperature coefficient of resistance depending on technological parameters of AIC process.
- Добавил в систему: Синев Леонид Станиславович