Crystalline silicon solar cells with laser ablated penetrating V-grooves:Modeling and experimentстатья
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Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
Аннотация:Different approaches are under elaboration aimed at the cost
reduction of solar electricity. 3D penetrating emitter solar cells
are expected to offer performance enhancement at lower costs,
using low carrier lifetime cheaper silicon. Using laser ablation,
we have prepared indium–fluorine–oxide/(nþppþ)Cz-Si/
indium–tin–oxide bifacial silicon solar cells with deep
(110–120 mm) penetrating V-shaped emitter with aspect ratio
of 3–4 (height to half-width of the V-grooves). Compared with
the reference cell textured with conventional random pyramids
and thus not damaged by laser action, which showed front/rear
active area photocurrents of 41.1/33.3mAcm2, V-grooved
solar cells showed only slightly less front photocurrent of
40.1–40.7mAcm2, whereas the superior rear photocurrent
of 34.2mAcm2. The latter indicates that deep penetrating
emitter is especially useful in the case of bifacial solar cells.
The best pseudo-efficiency for V-grooved cell of 19.5% with
estimated bifaciality of 80% was obtained for the cell that
has been subjected to the smallest laser action during Vgrooving.
In addition, ray-tracingmodel was applied to calculate
efficiency of light absorption by a V-grooved silicon solar cell
for wavelengths in the range from 400 to 1200 nm. The depth of
the grooves was varied from 0.05t to wafer’s thickness t.
The obtained experimental and computational results confirm
that the design of crystalline silicon solar cell based on
deep penetrating V-shaped emitter makes possible to obtain
high-efficiency solar cells even in the case of low-quality
silicon wafers.