Electrical and photoelectric properties of PbGa2Se4 single crystalsстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The dark current, spectral response of photocurrent, and thermal quenching of photocurrent were studied in PbGa2Se4 single crystals grown by the Bridgman-Stockbarger technique. Measurements were performed on 50- to 200-mu m In-PbGa2Se4-In sandwich structures in electric fields from 50 to 3 X 10(4) V/cm at temperatures from 200 to 400 K, The spectral response of the photocurrent through PbGa2Se4 showed maxima at 530, 760, and 1000 nm, The band Sap of PbGa2Se4, E-g = 2.35 eV, was found from the short-wavelength maximum by the Moss rule. As the electric field rose to 10(4) V/cm, the maximum photocurrent increased by two orders of magnitude. From thermal quenching of photocurrent, the ionization energy of recombination centers was found to be 0.89 eV.