Enhancement of Electron Mobility and Photoconductivity in Quantum Well In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrateстатья
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Дата последнего поиска статьи во внешних источниках: 25 сентября 2013 г.
Аннотация:Isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure on InP substrate were grown by molecular beam epitaxy. We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well In0.53Ga0.47As or by illumination using light with lambda = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used the Shubnikov-de Haas effect to analyze subband electron concentration and mobility. The maximal mobility was observed for quantum well width d = 16 nm.