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High-temperature growth and comparative characterization of (Er,Yb):YAl3(BO3)4 and NdAl3(BO3)4 epitaxial layersтезисы доклада
- Авторы: Volkova E.A., Maltsev V., Kolganova O., Leonyuk N.I.
- Сборник: Abstr. book of the 17th Intern. Conf. on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland, 11-16 August, 2013
- Тезисы
- Год издания: 2013
- Издательство: University of Warsaw
- Местоположение издательства: Poland
- Первая страница: 295
- Последняя страница: 295
- Аннотация: Er0.04Y0.96Al3(BO3)4, Er0.015Yb0.11Y0.875Al3(BO3)4 and NdAl3(BO3)4 epitaxial layers were grown from K2Mo3O10-based fluxed melts by LPE method. DSSG-grown YAB and NAB single crystals were used as substrates. Growth kinetics, homogeneity and micromorphology of (Er,Yb):YAB and NAB thin films were investigated.
- Добавил в систему: Леонюк Николай Иванович