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High-temperature ferromagnetism in laser-deposited layers of silicon and germanium doped with manganese or iron impuritiesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Demidov E.S., Aronzon B.A., Gusev S.N., Karzanov V.V., Lagutin A.S., Lesnikov V.P., Levchuk S.A., Nikolaev S.N., Perov N.S., Podolskii V.V., Rylkov V.V., Sapozhnikov M.V., Lashkul A.V.
- Журнал: Journal of Magnetism and Magnetic Materials
- Том: 321
- Номер: 7
- Год издания: 2009
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 690
- Последняя страница: 694
- DOI: 10.1016/j.jmmm.2008.11.026
- Аннотация: The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T(c) diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T(g) = (20-550) degrees C on single-crystal GaAs or Al(2)O(3) substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, Tg, for Si:Mn/GaAs layers with T(c)approximate to 400 K is shown to be about 400 degrees C. The Si:Mn/Al(2)O(3) layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, Si-based ferromagnetic layers have strongly different magnetic and electric properties in case of uniformly doped structures and digital alloys. Positive results of the Fermi level variation effect on the improvement of Si- and Ge-based DMS layers have been gained on the use of additional doping with shallow acceptor Al impurity which contributes to the increase of the hole concentration and the RKKY exchange interaction of 3d-ions. The Ge:(Mn, Al)/GaAs or Ge (Mn, Al)/Si layers grown at 20 degrees C feature surprising extraordinary angular dependence of FMR. (C) 2008 Elsevier B. V. All rights reserved.
- Добавил в систему: Перов Николай Сергеевич