Defect-induced high-temperature ferromagnetism in Si1−xMnx (x ≈ 0.52–0.55) alloysстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 4 февраля 2014 г.
Аннотация:We present a comparative study of the anomalous Hall effect (AHE) and of the transverse Kerr effect (TKE) in the nonstoichiometric Si1−xMnx (x ≈ 0.52–0.55) alloys. The data on AHE and TKE are consistent with each other and clearly indicate the intrinsic above room temperature ferromagnetic order in the studied samples. We argue that this order is not produced by the phase segregation effects, but rather has a global character, while even a small level of the nonstoichiometry in Si1−xMnx (x ≈ 0.52–0.55) alloys drastically changes their magnetic, electrical, optical and magneto-optical properties as compared to those of the stoichiometric manganese monosilicide MnSi. We propose a qualitative explanation of the obtained experimental results in the frame of the model of defect-induced ferromagnetic order using the first-principles calculations of the electronic and magnetic structure of the system.