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Dependence of the differential conductance of electrochemical transistor on overpotential in fully non-adiabatic regimeстатья
- Автор: Medvedev I.G.
- Журнал: Russian Journal of Electrochemistry
- Том: 58
- Номер: 12
- Год издания: 2022
- Издательство: Maik Nauka/Interperiodica Publishing
- Местоположение издательства: Russian Federation
- Первая страница: 1057
- Последняя страница: 1073
- DOI: 10.1134/S1023193522120047
- Аннотация: The dependence of the differential conductance of the electrochemical transistor on the overpotential at a constant bias voltage is studied theoretically within the fully non-adiabatic (diabatic) transistoroperation regime. An electrochemical transistor includes a redox group with one spin-degenerated electroniclevel, for which the Coulomb repulsion between the electrons with opposite spin projection is taken intoaccount. The electrodes are considered in a model with a wide conduction band. Using the numerical calculations, the regions of the highest differential conductance, which essentially depend on the system’s parameters, are revealed. The approximate analytical methods enable us to elucidate the physical meaning of theseregions. The information on these regions is of high practical importance, because in these regions the tunneling current changes abruptly with a change in the voltage across the electrodes.
- Добавил в систему: Медведев Игорь Георгиевич