Dependence of Raman scattering efficiency in silicon nanowire arrays on excitation wavelength

Bunkov, K.V.; Golovan, L.A.; Gonchar, K.A.; Timoshenko, V.Y.; Kashkarov, P.K.; Kulmas, M.; Sivakov, V.

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 11 апреля 2017 г.

Авторы: Bunkov K.V., Golovan L.A., Gonchar K.A., Timoshenko V.Yu, Kashkarov P.K., Kulmas M., Sivakov V.
Журнал: Semiconductors
Том: 47
Номер: 3
Год издания: 2013
Издательство: Springer
Местоположение издательства: New York
Первая страница: 354
Последняя страница: 357
DOI: 10.1134/S1063782613030068
Аннотация: The features of Raman scattering in layers of silicon nanowires from 50 to 350 nm in diameter, obtained by the chemical etching of crystalline silicon (c-Si) wafers with preliminarily deposited silver nanoparticles in fluoric acid solutions are studied. c-Si wafers with various crystallographic orientations and doping levels are used, which is conditioned by the different sizes and degrees of ordering of the formed nanostructures. It is found that the radiation of the Raman scattering of samples is depolarized, and its efficiency depends strongly on the excitation wavelength. Upon excitation by light with a wavelength of 1064 nm, the ratio of Raman-scattering intensities of silicon nanowire samples and c-Si is 2 to 5; as the wavelength decreases, this ratio increases for structures with larger silicon-nanowire diameters and higher degrees of ordering and decreases for less ordered structures. The results obtained are explained by the effect of partial light localization in silicon nanowire arrays.
Добавил в систему: Гончар Кирилл Александрович

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Dependence of Raman scattering efficiency in silicon nanowire arrays on excitation wavelengthстатья

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